Electron-phonon resonance in InAsÕGaSb type-II laser heterostructures
نویسندگان
چکیده
The rate of interband electron transitions assisted by LO-phonon emission is studied in an InAs/ GaSb double quantum well heterostructure, which models the active region of a type-II intersubband cascade laser. The main peak of the electron-phonon resonance corresponds to electron transitions from the lowest electron-like subband to the top of the highest light-hole-like subband that is displaced from the center of the Brillouin zone due to the asymmetry of the InAs/GaSb double quantum well heterostructure. © 2002 American Institute of Physics. @DOI: 10.1063/1.1462873#
منابع مشابه
Resonant phonon-assisted depopulation in type-I and type-II intersubband laser heterostructures
We show that LO phonon-assisted interband tunneling in type-II intersubband laser heterostructures is more efficient for the fast depopulation of the lower lasing states than the corresponding intersubband process in type-I double quantum wells (DQW). The main peak of the electron-phonon resonance in type-II DQW corresponds to electron transitions from the lowest electron-like subband to the to...
متن کاملElectron-phonon Interactions in Intersubband Laser Heterostructures
We present a simple semianalytical model, which allows comprehensive analysis of the LO-phonon assisted electron relaxation in quantum well intersubband semiconductor lasers. Examples of scattering rate tailoring in type-I double quantum well heterostructures and analysis of the subband depopulation process in type-II heterostructures illustrate applicability of the model.
متن کاملThe size-quantized oscillations of the optical-phonon-limited electron mobility in AlN/GaN/AlN nanoscale heterostructures
We have studied the electron mobility in the AlN/GaN/AlN heterostructures with the nanometer scale thickness by taking into account multiple quantized electron subbands and the confined optical phonon dispersion. It was shown that the inter-subband electronic transitions play an important role in limiting the electron mobility in the heterostructures when the energy separation between one of th...
متن کاملThe electrical transport properties in ZnO bulk, ZnMgO/ZnO and ZnMgO/ZnO/ZnMgO heterostructures
p { margin-bottom: 0.1in; direction: rtl; line-height: 120%; text-align: right; }a:link { color: rgb(0, 0, 255); } In this paper, the reported experimental data related to electrical transport properties in bulk ZnO, ZnMgO/ZnO and ZnMgO/ZnO/ZnMgO single and double heterostructures were analyzed quantitavely and the most important scattering parameters on controlling electron concentratio...
متن کاملRaman spectra of Ge/Ge isotope heterostructures with argon 488 and 514.5 nm excitations
Raman spectra of Ge/Ge isotope bi-layer structures recorded with 488 and 514.5 nm Ar laser excitations are reported. The relative amplitudes of the Ge and Ge confined optical phonon peaks differ significantly for the two excitations at T 1⁄4 10K, while it is almost the same for the spectra recorded at 300K. Possible interpretations of our results are provided considering the laser penetration d...
متن کامل